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参数资料
| 型号： | 2SK3239L-E |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-63, DPAK-3 |
| 文件页数： | 5/10页 |
| 文件大小： | 102K |
| 代理商： | 2SK3239L-E |
2SK2329(L), 2SK2329(S)
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
10
A
Drain peak current
ID(pulse)*
1
40
A
Body to drain diode reverse drain current
IDR
10
A
Channel dissipation
Pch*
2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
30
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±10
—
V
IG =
±200 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±6.5 V, VDS = 0
Zero gate voltage drain current
IDSS
—
100
A
VDS = 25 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.4
—
1.4
V
ID = 1 mA, VDS = 10 V
—
0.03
0.04
ID = 5 A, VGS = 4 V*
3
Static drain to source on state
resistance
RDS(on)
—
0.04
0.06
ID = 5 A, VGS = 2.5 V*
3
Forward transfer admittance
|yfs|
10
18
—
S
ID = 5 A, VDS = 10 V*
3
Input capacitance
Ciss
—
1250
—
pF
Output capacitance
Coss
—
540
—
pF
Reverse transfer capacitance
Crss
—
120
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
20
—
ns
Rise time
tr
—
145
—
ns
Turn-off delay time
td(off)
—
225
—
ns
Fall time
tf
—
125
—
ns
ID = 5 A, VGS = 4 V,
RL = 2
Body to drain diode forward voltage
VDF
—
0.9
—
V
IF = 10 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
100
—
ns
IF = 10 A, VGS = 0,
diF / dt = 20 A /
s
Note:
3. Pulse Test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3239STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK324 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SK324 |
| 2SK325 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-3 |
| 2SK3262 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET |
| 2SK3262-01MR | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 85 Milliohms;ID +/-20A;TO-220F15;PD 45W |
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