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参数资料
| 型号： | 2SK3239L-E |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-63, DPAK-3 |
| 文件页数： | 7/10页 |
| 文件大小： | 102K |
| 代理商： | 2SK3239L-E |
2SK2329(L), 2SK2329(S)
Rev.2.00 Sep 07, 2005 page 4 of 7
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Forward Transfer Admittance
vs. Drain Current
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Typical Capacitance vs.
Drain to Source Voltage
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
Gate
to
Source
Voltage
V
GS
(V)
Gate Charge Qg (nc)
Drain Current ID (A)
Switching
Time
t
(ns)
Switching Characteristics
0.10
0.08
0.06
0.04
0.02
-40
0
40
80
120
160
0
Pulse Test
ID = 2 A, 5 A, 10 A
VGS = 4 V
2.5 V
2 A, 5 A, 10 A
0.1
0.3
1
3
10
30
100
50
20
10
2
5
1
0.5
25
°C
Tc = -25
°C
75
°C
VDS = 10 V
Pulse Test
1000
200
500
100
20
50
10
0.2
0.5
1
2
5
10
20
di/dt = 20 A/
s
VGS = 0, Ta = 25°C
010
20
30
40
50
5000
2000
1000
200
500
100
50
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
100
80
60
40
20
0
20
16
12
8
4
VDD = 10 V
25 V
ID = 10 A
VGS
VDS
VDD = 25 V
10 V
20
40
60
80
100
0
1000
200
500
100
20
50
10
0.2
0.5
1
2
5
10
20
VGS = 4 V, VDD = 10 V
PW = 3
s, duty < 1 %
tf
tr
td(on)
td(off)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3239STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK324 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SK324 |
| 2SK325 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-3 |
| 2SK3262 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET |
| 2SK3262-01MR | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 85 Milliohms;ID +/-20A;TO-220F15;PD 45W |
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