参数资料
型号: 2SK3288
元件分类: 小信号晶体管
英文描述: 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MPAK-3
文件页数: 6/10页
文件大小: 56K
代理商: 2SK3288
2SK3288
3
Main Characteristics
0.1
1.0
10
50
0.5
0.4
0.3
0.2
0.1
0
2
468
10
500
400
300
200
100
0
24
68
10
800
600
400
200
0
50
100
150
200
V
= 3V
GS
Tc = –25°C
75°C
Pulse Test
V
= 10 V
Pulse Test
DS
5
1.0
0.1
0.01
0.001
PW = 10 ms
(1 shot)
DC
Operation
6 V
4 V
8 V 7 V
25°C
Drain to Source Voltage
V
(V)
DS
Maximum Safe Operation Area
Drain
Current
I
(A)
D
Typical Output Characteristics
Drain to Source Voltage
V
(V)
DS
Gate to Sourve Voltage
V
(V)
GS
Typical Transfer Characteristics
Operation in this area
is limited by RDS(on)
Channel
Dissipation
*Pch
(W)
Ambient Temperature
Ta (°C)
Power vs. Tenperature Derating
Drain
Current
I
(mA)
D
Drain
Current
I
(A)
D
5 V
10 s
100 s
1 ms
0.0005
0.002
0.005
0.02
0.05
0.2
0.5
2
0.05
0.2
0.5
2
5
20
Ta=25°C
*Value on the alumina ceramic boad. (12.5x20x0.7mm)
Value on the alumina ceramic boad. (12.5x20x0.7mm)
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相关代理商/技术参数
参数描述
2SK3288ENTL 功能描述:MOSFET N-CH 30V .1A MPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SK3289 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Switching
2SK3289AN(TL-E) 制造商:Renesas Electronics 功能描述:Cut Tape
2SK3290 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Switching
2SK3290BNTL 制造商:Renesas Electronics 功能描述:Cut Tape