参数资料
型号: 2SK3288
元件分类: 小信号晶体管
英文描述: 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MPAK-3
文件页数: 7/10页
文件大小: 56K
代理商: 2SK3288
2SK3288
4
2.0
1.6
1.2
0.8
0.4
0
24
6
8
10
0.1
0.5
0.2
50
20
10
2
5
1.0
0.5
10
8
6
4
2
–40
0
40
80
120
160
0
1.0
I
= 100mA
D
50m A
Pulse Test
V
= 4V
GS
10 V
Pulse Test
I
= 100m A
D
V
= 4 V
GS
10 V
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
voltage
Drain Current
I
(A)
D
Static Drain to Source on State
Resistance vs. Drain Current
Case Temperature
Tc
(°C)
Static Drain to Source on State
Resistance vs. Temperature
|yfs|
(S)
Drain Current I
(A)
D
Forward Transfer Admittance
vs. Drain Current
Forward
Transfer
Admittance
10m A
10mA
10mA,50mA,100m A
50mA
0.01
0.02
0.05
0.1
0.5
0.2
0.1
0.02
0.05
0.01
0.005
V
= 10 V
Pulse Test
DS
Tc = –25 °C
25 °C
75 °C
Static
Drain
to
Source
on
State
Resistance
()
DS(on)
R
Static
Drain
to
Source
on
State
Resistance
()
DS(on)
R
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相关代理商/技术参数
参数描述
2SK3288ENTL 功能描述:MOSFET N-CH 30V .1A MPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SK3289 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Switching
2SK3289AN(TL-E) 制造商:Renesas Electronics 功能描述:Cut Tape
2SK3290 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Switching
2SK3290BNTL 制造商:Renesas Electronics 功能描述:Cut Tape