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参数资料
| 型号： | 2SK3306B-S17-AY |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, ISOLATED TO-220, MP-45F, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 181K |
| 代理商： | 2SK3306B-S17-AY |
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Document No. D18462EJ1V0DS00 (1st edition)
Date Published November 2006 NS CP (K)
Printed in Japan
SWITCHING
N-CHANNEL POWER MOSFET
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3306B
2006
DESCRIPTION
The 2SK3306B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low gate charge
QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)
Gate voltage rating : ±30 V
Low on-state resistance
RDS(on) = 1.5
Ω MAX. (VGS = 10 V, ID = 2.5 A)
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK3306B-S17-AY
Note
Pure Sn (Tin)
Tube 50 p/tube
Isolated TO-220 (MP-45F) typ. 2.2 g
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
500
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±5
A
Drain Current (pulse)
Note1
ID(pulse)
±20
A
Total Power Dissipation (TC = 25
°C)
PT1
35
W
Total Power Dissipation
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
5.0
A
Single Avalanche Energy
Note2
EAS
125
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
(Isolated TO-220)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3306 | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3310 | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3320-BL | 14 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3320 | 14 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3321GR | SMALL SIGNAL, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3307 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3307-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,70A,7,5m ohm,TO-3P 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-3P |
| 2SK3309 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3309(Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3309(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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