- 您现在的位置：买卖IC网 > PDF目录30617 > 2SK3306B-S17-AY 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF资料下载
参数资料
| 型号： | 2SK3306B-S17-AY |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, ISOLATED TO-220, MP-45F, 3 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 181K |
| 代理商： | 2SK3306B-S17-AY |
Data Sheet D18462EJ1V0DS
4
2SK3306B
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Dr
ain
Cur
rent
-
A
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10 12 14 16 18
VGS = 20 V
Pulsed
10 V
VDS - Drain to Source Voltage - V
I
D
-Drain
Cur
rent
-
A
0.0001
0.001
0.01
0.1
1
10
100
0
2
4
6
8
10
12
14
VDS = 10 V
Pulsed
Tch =
55°C
25°C
25
°C
75
°C
125
°C
150
°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS(off
)-
Gate
Cut
-off
V
ol
tage
-
V
0
1
2
3
4
5
-50
0
50
100
150
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|
y
fs
|-
For
w
ard
Transfer
Adm
ittan
ce
-
S
0.01
0.1
1
10
0.01
0.1
1
10
100
VDS = 10 V
Pulsed
25°C
25
°C
75
°C
125
°C
150
°C
Tch =
55°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
D
S
(on)
-Drain
to
S
ourc
eOn-st
ate
Re
sist
ance
-
Ω
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
Pulsed
ID = 5.0 A
2.5 A
VGS – Gate to Source Voltage - V
R
D
S
(on)
-Drain
to
S
ourc
eOn-st
ate
Re
sist
ance
-
Ω
0
1
2
3
0.1
1
10
100
20 V
VGS = 10 V
Pulsed
ID - Drain Current - A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3306 | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3310 | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3320-BL | 14 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3320 | 14 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3321GR | SMALL SIGNAL, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3307 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3307-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,70A,7,5m ohm,TO-3P 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-3P |
| 2SK3309 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3309(Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3309(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。