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参数资料
| 型号： | 2SK3316 |
| 厂商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 东芝场效应晶体管硅?频道马鞍山类型 |
| 文件页数： | 1/6页 |
| 文件大小： | 261K |
| 代理商： | 2SK3316 |
2SK3316
2002-07-03
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
MOSV)
2SK3316
Switching Regulator Applications
Fast reverse recovery time
Built
in high
speed free
wheeling diode
Low drain
source ON resistance
High forward transfer admittance
Low leakage current
Enhancement
mode
Maximum Ratings
(Ta = 25°C)
: t
rr
= 60 ns (typ.)
: R
DS (ON)
=
1
.6
(typ.)
: |Y
fs
| = 3.8 S (typ.)
: I
DSS
=
1
00 μA (max) (V
DS
= 500 V)
: V
th
= 2.0~4.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Characteristics
Symbol
Rating
Unit
Drain
source voltage
V
DSS
500
V
Drain
gate voltage (R
GS
= 20 k
)
V
DGR
500
V
Gate
source voltage
V
GSS
±30
V
DC
(Note 1)
I
D
5
A
Drain current
Pulse (Note 1)
I
DP
20
A
Drain power dissipation (Tc = 25°C)
P
D
35
W
Single pulse avalanche energy
(Note 2)
E
AS
180
mJ
Avalanche current
I
AR
5
A
Repetitive avalanche energy (Note 3)
E
AR
3.5
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch
c)
3.57
°C / W
Thermal resistance, channel to
ambient
R
th
(ch
a)
62.5
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD =
90 V, T
ch
= 25°C (initial), L = 12.2 mH, R
G
= 25
, I
AR
= 5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3316(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220NIS |
| 2SK3316_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3316QT | 制造商:Toshiba America Electronic Components 功能描述:SILICON N CHANNEL MOSFET |
| 2SK3318 | 功能描述:MOSFET N-CH 600V 15A TOP-3F RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK331A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 300UA I(DSS) | SO |
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