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参数资料
| 型号： | 2SK3316 |
| 厂商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 东芝场效应晶体管硅?频道马鞍山类型 |
| 文件页数： | 2/6页 |
| 文件大小： | 261K |
| 代理商： | 2SK3316 |
2SK3316
2002-07-03
2
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±25 V
,
V
DS
= 0 V
—
—
±10
μA
Gate
source breakdown voltage
V
(BR) GSS
I
G
= ±100 μA
,
V
DS
= 0 V
±30
—
—
V
Drain cut
off current
I
DSS
V
DS
= 500 V
,
V
GS
= 0 V
—
—
100
μA
Drain
source breakdown voltage
V
(BR) DSS
I
D
= 10 mA
,
V
GS
= 0 V
500
—
—
V
Gate threshold voltage
V
th
V
DS
= 10 V,
I
D
= 1 mA
2.0
—
4.0
V
Drain
source ON resistance
R
DS (ON)
V
GS
= 10 V,
I
D
= 2.5 A
—
1.6
1.8
Forward transfer admittance
|Y
fs
|
V
DS
= 10 V,
I
D
= 2.5 A
2.5
3.8
—
S
Input capacitance
C
iss
—
780
—
Reverse transfer capacitance
C
rss
—
60
—
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
—
200
—
pF
Rise time
tr
—
12
—
Turn
on time
t
on
—
25
—
Fall time
t
f
—
15
—
Switching time
Turn
off time
t
off
—
60
—
ns
Total gate charge (Gate
source
plus gate
drain)
Q
g
—
17
—
Gate
source charge
Q
gs
—
11
—
Gate
drain (“miller”) charge
Q
gd
V
DD
≈
400 V, V
GS
= 10 V, I
D
= 5 A
—
6
—
nC
Source
Drain Ratings and Characteristics
(Ta =
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
—
—
—
5
A
Pulse drain reverse current
(Note 1)
I
DRP
—
—
—
20
A
Forward voltage (diode)
V
DSF
I
DR
= 5 A, V
GS
= 0 V
—
—
1.7
V
Reverse recovery time
t
rr
—
60
—
ns
Reverse recovery charge
Q
rr
I
DR
= 5 A, V
GS
= 0 V, dI
DR
/ dt
=
100 A / μs
—
0.1
—
μC
Marking
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3316(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220NIS |
| 2SK3316_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3316QT | 制造商:Toshiba America Electronic Components 功能描述:SILICON N CHANNEL MOSFET |
| 2SK3318 | 功能描述:MOSFET N-CH 600V 15A TOP-3F RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK331A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 300UA I(DSS) | SO |
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