参数资料
型号: 2SK3359-S
元件分类: JFETs
英文描述: 70 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
封装: MP-25 FIN CUT, 3 PIN
文件页数: 1/4页
文件大小: 48K
代理商: 2SK3359-S
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confirm that this is the latest version.
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1999
MOS FIELD EFFECT TRANSISTOR
2SK3359
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PRELIMINARY DATA SHEET
Document No.
D14323EJ1V0DS00 (1st edition)
Date Published
April 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3359 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
RDS(on)1 = 20 m
MAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 28 m
MAX. (VGS = 4.5 V, ID = 30 A)
Low Ciss: Ciss = 4900 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±20
V
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
+20,
10
V
Drain Current (DC)
ID(DC)
±70
A
Drain Current (Pulse)
Note1
ID(pulse)
±280
A
Total Power Dissipation (TC = 25°C)
PT
100
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
50
A
Single Avalanche Energy
Note2
EAS
250
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25
, VGS = 20 V
→ 0 V
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
1.25
°C/W
Channel to Ambient
Rth(ch-A)
83.3
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3359
TO-220AB
2SK3359-S
TO-262
2SK3359-Z
TO-220SMD
5
The mark 5
5
5 shows major revised points.
5
(TO-220AB)
(TO-262)
(TO-220SMD)
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相关代理商/技术参数
参数描述
2SK3359-Z 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK336 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 400MA I(D) | TO-92
2SK3360 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3361 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3362 制造商:FUJI 制造商全称:Fuji Electric 功能描述:POWER MOSFET