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参数资料
| 型号： | 2SK3363-01 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOS-FET |
| 中文描述： | 50 A, 30 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 119K |
| 代理商： | 2SK3363-01 |
1
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D(puls]
V
GS
E
AV *1
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
mJ
W
°C
°C
30
±50
±200
±16
1735
80
+150
-55 to +150
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3363-01
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
DS
=30V
V
V
GS
=0V Tch=125°C
=±16V
DS
=0V
V
GS
I
D
=50A V
GS
=4V
I
D
=50A V
GS
=10V
I
D
=50A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=15V I
D
=100A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
30
1.0
1.5
10
0.2
10
8.0
5.3
35
70
3900
2000
850
17
70
250
180
50
1.0
65
0.12
V
V
μA
mA
nA
m
S
pF
A
V
ns
μC
ns
Min. Typ. Max. Units
Thermal resistance
1.56
75.0
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=1mA V
GS
=0V
I
D
=1mA V
DS
=V
GS
L=100μH T
ch
=25°C
I
F
=50A V
GS
=0V T
ch
=25°C
I
F
=50A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
*1 L=0.925mH, Vcc=12V
2.0
500
1.0
100
10.5
6.8
5850
3000
1280
30
110
380
270
1.5
TO-220AB
3.
Source
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| 2SK3364-01 | N-CHANNEL SILICON POWER MOS-FET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3364-01 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET |
| 2SK3365 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3365-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-251 |
| 2SK3365-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3365-Z(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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