参数资料
型号: 2SK3387
厂商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV)
中文描述: 东芝场效应晶体管硅?频道马鞍山型(二级-π- MOSV)
文件页数: 1/6页
文件大小: 216K
代理商: 2SK3387
2SK3387
2002-07-22
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
- -MOS
V
)
2SK3387
Switching Regulator, DC-DC Converter and Motor Drive
Applications
4 V gate drive
Low drain-source ON resistance: R
DS (ON)
= 0.08
(typ.)
High forward transfer admittance: Y
fs
=
1
7 S (typ.)
Low leakage current: I
DSS
=
1
00 μA (V
DS
=
1
50 V)
Enhancement-mode: V
th
= 0.8~2.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
150
V
Drain-gate voltage (R
GS
20 k )
Gate-source voltage
150
V
20
V
DC
(Note 1)
18
Drain current
Pulse (Note 1)
54
A
Drain power dissipation (Tc 25°C)
100
W
Single pulse avalanche energy
(Note 2)
E
AS
176
mJ
Avalanche current
I
AR
E
AR
T
ch
T
stg
18
A
Repetitive avalanche energy (Note 3)
10
mJ
Channel temperature
150
°C
Storage temperature range
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.25
°C/W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2:
V
DD
50 V, T
ch
25°C (initial), L 800 H, R
G
25 , I
AR
18 A
Note 3:
Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
1
2
3
4
Notice:
Please use the S
1
pin for gate input
signal return. Make sure that the
main current flows into S2 pin.
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