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| 型号： | 2SK3391JX |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Silicon N-Channel MOS FET UHF Power Amplifier |
| 中文描述： | 硅N沟道场效应晶体管超高频功率放大器 |
| 文件页数： | 1/5页 |
| 文件大小： | 62K |
| 代理商： | 2SK3391JX |
Rev.2.00, Apr.14.2004, page 1 of 4
2SK3391
Silicon N-Channel MOS FET
UHF Power Amplifier
REJ03G0209-0200Z
(Previous ADE-208-847 (Z))
Rev.2.00
Apr.14.2004
Features
High power output, High gain, High efficiency
PG = 18 dB, Pout = 1.6 W,
η
add = 58% min. (f = 836 MHz)
Compact package capable of surface mounting
Outline
UPAK
D
G
S
1
2,4
3
3
1. Gate
2. Source
3. Drain
4. Source
2
1
4
Note:
Marking is “JX“.
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
<
1sec, Tch
<
150°C
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
Pch
Note2
Tch
Tstg
Ratings
17
±10
0.3
0.75
5
150
–45 to +150
Unit
V
V
A
A
W
°
C
°
C
Note1
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|---|---|
| 2SK3391JXTL | 功能描述:MOSFET N-CH 17V 300MA UPAK RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| 2SK3391JXTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK3396 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-Channel Junction FET |
| 2SK3397 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) |
| 2SK3397_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Relay Drive and DC-DC Converter Applications Motor Drive Applications |
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