参数资料
型号: 2SK3398
厂商: Toshiba Corporation
元件分类: DC/DC变换器
英文描述: Switching Regulator and DC-DC Converter Applications and Motor Drive Applications
中文描述: 开关稳压器和DC - DC转换器的应用和电机驱动应用
文件页数: 1/7页
文件大小: 225K
代理商: 2SK3398
2SK3398
2002-09-04
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOS
V
)
2SK3398
Switching Regulator and DC-DC Converter Applications
and Motor Drive Applications
Low drain-source ON resistance: R
DS (ON)
= 0.4 m
(typ.)
High forward transfer admittance: |Y
fs
| = 9.0 S (typ.)
Low leakage current: I
DSS
=
1
00 μA (max) (V
DS
= 500 V)
Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
500
V
Drain-gate voltage (R
GS
20 k )
V
DGR
500
V
Gate-source voltage
V
GSS
30
V
DC
(Note 1)
I
D
12
Drain current
Pulse (Note 1)
I
DP
48
A
Drain power dissipation (Tc 25°C)
P
D
100
W
Single pulse avalanche energy
(Note 2)
E
AS
364
mJ
Avalanche current
I
AR
12
A
Repetitive avalanche energy (Note 3)
E
AR
10
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.25
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: V
DD
90 V, T
ch
25°C (initial), L 5.85 mH, R
G
25 ,
I
AR
12 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
1
3
4
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