参数资料
型号: 2SK3407
厂商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
中文描述: 东芝场效应晶体管硅?频道马鞍山类型(喝醉MOSV)
文件页数: 1/6页
文件大小: 230K
代理商: 2SK3407
2SK3407
2002-08-12
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOS
V
)
2SK3407
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 0.48
(typ.)
High forward transfer admittance: |Y
fs
| = 7.5 S (typ.)
Low leakage current: I
DSS
=
1
00 μA (max) (V
DS
= 450 V)
Enhancement-mode: V
th
= 2.4~3.4 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
450
V
Drain-gate voltage (R
GS
20 k )
V
DGR
450
V
Gate-source voltage
V
GSS
30
V
DC
(Note 1)
I
D
10
Drain current
Pulse
(Note 1)
I
DP
40
A
Drain power dissipation (Tc 25°C)
P
D
40
W
Single pulse avalanche energy
(Note 2)
E
AS
222
mJ
Avalanche current
I
AR
10
A
Repetitive avalanche energy (Note 3)
E
AR
4
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
3.125
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
62.5
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
90 V, T
ch
25°C (initial), L 3.7 mH, R
G
25 , I
AR
10 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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