参数资料
型号: 2SK3407
厂商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
中文描述: 东芝场效应晶体管硅?频道马鞍山类型(喝醉MOSV)
文件页数: 5/6页
文件大小: 230K
代理商: 2SK3407
2SK3407
2002-08-12
5
D
Channel temperature (initial) T
ch
(°C)
A
Pulse width t
w
(S)
N
r
t
/
t
Drain-source voltage V
DS
(V)
Safe operating area
r
th
– t
w
15
V
15
V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
25
V
DD
90 V, L 3.7 mH
VDD
BVDSS
BVDSS
2
I
L
2
1
Ε
AS
E
AS
– T
ch
0.01
10
0.1
1
10
100
1 m
10 m
100 m
1
10
T
PDM
t
Duty t/T
Rth (ch-c) 3.125°C/W
Duty 0.5
0.2
0.1
Single pulse
0.05
0.02
0.01
0.001
0.003
0.005
0.03
0.05
0.3
0.5
3
5
100
200
300
50
100
0
25
400
75
150
125
0.01
1
0.1
1
10
100
10
100
1000
*
Single nonrepetitive pulse
Tc 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (pulse)
*
ID max
(continuous)
DC operation
Tc 25°C
100 s
*
1 ms
*
VDSS max
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