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参数资料
| 型号： | 2SK3407 |
| 厂商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV) |
| 中文描述： | 东芝场效应晶体管硅?频道马鞍山类型（喝醉MOSV） |
| 文件页数： | 6/6页 |
| 文件大小： | 230K |
| 代理商： | 2SK3407 |
2SK3407
2002-08-12
6
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3417 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 2SK3426 | For Impedance Conversion In Low Frequency |
| 2SK3427 | Silicon N-Channel Junction |
| 2SK3437 | DC-DC Converter, Relay Drive and Motor Drive Applications |
| 2SK3439 | DC-DC Converter Relay Drive and Motor Drive Applications |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3407(F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 450V 10A 3-Pin(3+Tab) TO-220NIS |
| 2SK3407(F,T) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH, 450V, 10A - Rail/Tube |
| 2SK3407_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3408 | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 2SK3408(0)-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:SINGLE MOSFET - Bulk |
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