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参数资料
| 型号： | 2SK3407 |
| 厂商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV) |
| 中文描述： | 东芝场效应晶体管硅?频道马鞍山类型（喝醉MOSV） |
| 文件页数： | 2/6页 |
| 文件大小： | 230K |
| 代理商： | 2SK3407 |
2SK3407
2002-08-12
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
25 V, V
DS
0 V
10
A
Gate-source breakdown voltage
V
(BR) GSS
I
G
10 A, V
DS
0 V
30
V
Drain cut-off current
I
DSS
V
DS
450 V, V
GS
0 V
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
10 mA, V
GS
0 V
450
V
Gate threshold voltage
V
th
V
DS
10 V, I
D
1 mA
2.4
3.4
V
Drain-source ON resistance
R
DS (ON)
V
GS
10 V, I
D
5 A
0.48
0.65
Forward transfer admittance
Y
fs
V
DS
10 V, I
D
5 A
3.5
7.5
S
Input capacitance
C
iss
1400
Reverse transfer capacitance
C
rss
240
Output capacitance
C
oss
V
DS
10 V, V
GS
0 V, f 1 MHz
590
pF
Rise time
t
r
35
Turn-on time
t
on
50
Fall time
t
f
80
Switching time
Turn-off time
t
off
260
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
35
Gate-source charge
Q
gs
19
Gate-drain “miller” charge
Q
gd
V
DD
360 V, V
GS
10 V, I
D
10 A
16
nC
Source-Drain Ratings and Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
10
A
Pulse drain reverse current
(Note 1)
I
DRP
40
A
Forward voltage (diode)
V
DSF
I
DR
10 A, V
GS
0 V
1.7
V
Reverse recovery time
t
rr
280
ns
Reverse recovery charge
Q
rr
I
DR
10 A, V
GS
0 V,
dI
DR
/dt 100 A/ s
2.7
C
Marking
※
Type
K3407
※
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty
1%, t
w
10 s
0 V
10
V
V
GS
R
L
40
V
DD
200 V
I
D
5
A
V
OUT
5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3407(F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 450V 10A 3-Pin(3+Tab) TO-220NIS |
| 2SK3407(F,T) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH, 450V, 10A - Rail/Tube |
| 2SK3407_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3408 | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 2SK3408(0)-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:SINGLE MOSFET - Bulk |
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