参数资料
型号: 2SK3391JX
厂商: Renesas Technology Corp.
英文描述: Silicon N-Channel MOS FET UHF Power Amplifier
中文描述: 硅N沟道场效应晶体管超高频功率放大器
文件页数: 3/5页
文件大小: 62K
代理商: 2SK3391JX
2SK3391
Rev.2.00, Apr.14.2004, page 3 of 4
Drain Current I
D
(A)
Drain to Source Saturation Voltage vs.
Drain Current
Input Capacitance vs.
Gate to Source Voltage
9
8.5
-10
- 6
- 2
2
6
10
V
DS
= 0
f = 1 MHz
9.5
10
10.5
V
D
D
I
Gate to Source Voltage V
GS
(V)
3.6
3.2
2.8
2.4
2.0
1.6
- 25
Ambient Temperature Ta (
°
C)
G
Gate to Source Cutoff Voltage vs.
Ambient Temperature
0
25
50
75
100
125
V
DS
= 13.7 V
V
G
10 mA
I
D
= 0.1 mA
1 mA
Output Capacitance vs.
Drain to Source Voltage
1
3
10
30
1
0.1
10
100
30
3
O
Drain to Source Voltage V
DS
(V)
0.3
V
GS
= 0
f = 1 MHz
1
3
10
30
1
0.3
10
0.1
3
Reverse Transfer Capacitance vs.
Drain to Gate Voltage
Drain to Gate Voltage V
DG
(V)
R
0.1
0.3
V
GS
= 0
f = 1 MHz
A
η
a
Input power Pin (mW)
Output Power, Added Efficiency vs.
Input Power
O
0
200
150
100
50
0
100
60
40
20
80
250
2.5
2
1
0.5
0
1.5
V
DS
= 13.7 V
I
DO
= 0.15 A
f = 836 MHz
Pout
η
add
0.1
0.03
0.3
10
V
GS
= 10 V
Pulse Test
1
3
0.01
Tc = - 25
°
C
25
°
C
75
°
C
0.01
0.03
0.1
0.3
1
0.001
0.003
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