参数资料
型号: 2SK3387
厂商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV)
中文描述: 东芝场效应晶体管硅?频道马鞍山型(二级-π- MOSV)
文件页数: 5/6页
文件大小: 216K
代理商: 2SK3387
2SK3387
2002-07-22
5
Safe operating area
D
Channel temperature (initial) Tch (°C)
E
AS
– T
ch
A
r
th
– t
w
Pulse width t
w
(S)
N
r
t
/
t
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
T
PDM
t
Duty t/T
Rth (ch-c) 1.25°C/W
0.5
0.2
0.1
Single pulse
0.05
0.02
0.01
0.1
1
0.3
0.5
1
3
5
10
30
50
100
3
10
100
30
300
*
Single nonrepetitive pulse
Tc 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (pulsed)
*
ID max
(continuous)
*
DC operation
Tc 25°C
100 s
*
1 ms
*
VDSS max
200
160
120
80
40
0
25
50
75
100
125
150
15
V
15
V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
25
V
DD
50 V, L 0.8 mH
VDD
BVDSS
BVDSS
2
I
L
2
1
Ε
AS
Drain-source voltage V
DS
(V)
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