- 您现在的位置：买卖IC网 > PDF目录371554 > 2SK3388 (Toshiba Corporation) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type PDF资料下载
参数资料
| 型号： | 2SK3388 |
| 厂商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 东芝场效应晶体管硅?频道马鞍山类型 |
| 文件页数： | 1/6页 |
| 文件大小： | 225K |
| 代理商： | 2SK3388 |
2SK3388
2002-02-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOS
V
)
2SK3388
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
Low drain-source ON resistance: R
DS (ON)
= 82 m
(typ.)
High forward transfer admittance: |Y
fs
| = 20 S (typ.)
Low leakage current: I
DSS
=
1
00 μA (V
DS
= 250 V)
Enhancement-mode: V
th
=
1
.5 to 3.5 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
250
V
Drain-gate voltage (R
GS
20 k )
V
DGR
250
V
Gate-source voltage
V
GSS
20
V
DC
(Note 1)
I
D
20
Drain current
Pulse
(Note 1)
I
DP
60
A
Drain power dissipation (Tc 25°C)
P
D
125
W
Single pulse avalanche energy
(Note 2)
E
AS
487
mJ
Avalanche current
I
AR
20
A
Repetitive avalanche energy (Note 3)
E
AR
12.5
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.00
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2:
V
DD
50 V, T
ch
25°C (initial), L 2.06 mH, I
AR
20 A,
R
G
25
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
Notice:
Please use the S
1
pin for gate
input signal return. Make
sure that the main current
flows into S2 pin.
1
2
3
4
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3389 | Switching Regulator, DC-DC Converter Applications Motor Drive Applications |
| 2SK3391 | Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK3391JX | Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK3396 | Silicon N-Channel Junction FET |
| 2SK3397 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3388(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 20A SC-97 |
| 2SK3388_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SK3388_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SK3389 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator, DC-DC Converter Applications Motor Drive Applications |
| 2SK3389(TE24L,Q) | 功能描述:MOSFET N-ch 30V 75A 0.004 ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。