参数资料
型号: 2SK3388
厂商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
中文描述: 东芝场效应晶体管硅?频道马鞍山类型
文件页数: 4/6页
文件大小: 225K
代理商: 2SK3388
2SK3388
2002-02-06
4
D
D
G
t
Case temperature Tc (°C)
R
DS (ON)
– Tc
D
D
Drain-source voltage V
DS
(V)
I
DR
– V
DS
D
D
Drain-source voltage V
DS
(V)
Capacitance – V
DS
C
Case temperature Tc (°C)
V
th
– Tc
Case temperature Tc (°C)
P
D
– Tc
G
G
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
D
D
40
80
10
0
40
80
120
200
120
160
160
200
0
40
80
120
200
80
40
0
40
80
120
160
160
10
Common source
VGS 10 V
Pulse test
ID 20 A
5
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1
10
100
Common source
Tc 25°C
Pulse test
VGS 10 V
5
3
1
0
10
0.1
1
10
100
100
1000
10000
Ciss
Common source
VGS 0 V
f 1 MHz
Tc 25°C
Coss
Crss
0
80
40
0
40
80
120
160
1
2
3
4
Common source
VDS 10 V
ID 1 mA
Pulse test
100
200
0
0
40
80
120
200
300
400
160
500
VDD 50 V
100
VGS
VDS
Common source
ID 20 A
Tc 25°C
Pulse test
0
4
8
12
16
20
200
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