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参数资料
| 型号： | 2SK3387 |
| 厂商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) |
| 中文描述： | 东芝场效应晶体管硅?频道马鞍山型（二级-π- MOSV） |
| 文件页数： | 2/6页 |
| 文件大小： | 216K |
| 代理商： | 2SK3387 |
2SK3387
2002-07-22
2
Electrical Characteristics
(Note 4) (Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
I
DSS
V
GS
16 V, V
DS
0 V
V
DS
150 V, V
GS
0 V
I
D
10 mA, V
GS
0 V
V
DS
10 V, I
D
1 mA
V
GS
4 V, I
D
9 A
V
GS
10 V, I
D
9 A
V
DS
10 V, I
D
9 A
10
A
Drain cut-off current
100
A
Drain-source breakdown voltage
V
(BR) DSS
V
th
150
V
Gate threshold voltage
0.8
2.0
V
0.09
0.18
Drain-source ON resistance
R
DS (ON)
0.08
0.12
Forward transfer admittance
Y
fs
C
iss
C
rss
C
oss
10
17
S
Input capacitance
1380
Reverse transfer capacitance
200
Output capacitance
V
DS
10 V, V
GS
0 V, f 1 MHz
610
pF
Rise time
t
r
12
Turn-on time
t
on
20
Fall time
t
f
12
Switching time
Turn-off time
t
off
68
ns
Total gate charge (gate-source plus
gate-drain)
Q
g
57
nC
Gate-source charge
Q
gs
43
nC
Gate-drain (“miller”) charge
Q
gd
V
DD
120 V, V
GS
10 V, I
D
18 A
14
nC
Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin.
(However, while switching times are measured, please don’t connect and ground it.)
Source-Drain Diode Ratings and Characteristics
(Note 5) (Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1, 5)
I
DR
1
18
A
Pulse drain reverse current
(Note 1, 5)
I
DRP
1
54
A
Continuous drain reverse current (Note 1, 5)
I
DR
2
1
A
Pulse drain reverse current
(Note 1, 5)
I
DRP
2
4
A
Diode forward voltage
V
DS2F
I
DR1
18 A, V
GS
0 V
1.7
V
Reverse recovery time
t
rr
185
ns
Reverse recovery charge
Q
rr
I
DR
18 A, V
GS
0 V,
dI
DR
/dt 100 A/ s
1.3
C
Note 5: drain, flowing current value between the S2 pin, open the S1 pin
drain, flowing current value between the S1 pin, open the S2 pin
Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin.
Marking
※
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
※
Type
K3387
Duty
1%, t
w
10 s
0 V
10
V
V
GS1
R
L
11
V
DD
100 V
I
D
9
A
V
OUT
G
S
1
4
S
2
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相关代理商/技术参数 |
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|---|---|
| 2SK3387(TE24L,Q) | 功能描述:MOSFET N-ch 150V 18A 0.08 ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3387_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications |
| 2SK3388 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 2SK3388(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 20A SC-97 |
| 2SK3388_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
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