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参数资料
| 型号： | 2SK3374 |
| 厂商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) |
| 中文描述： | 东芝场效应晶体管硅?频道马鞍山型（π- MOSV） |
| 文件页数： | 1/6页 |
| 文件大小： | 227K |
| 代理商： | 2SK3374 |
2SK3374
2002-08-09
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS
V
)
2SK3374
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 4.0 (typ.)
High forward transfer admittance: Y
fs
= 0.8 S (typ.)
Low leakage current: I
DSS
= 100 μA (max) (V
DS
= 450 V)
Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
450
V
Drain-gate voltage (R
GS
20 k )
V
DGR
450
V
Gate-source voltage
V
GSS
30
V
DC
(Note 1)
I
D
1
A
Drain current
Pulse
(Note 1)
I
DP
2
A
Drain power dissipation
P
D
1.3
W
Single pulse avalanche energy
(Note 2)
E
AS
122
mJ
Avalanche current
I
AR
1
A
Repetitive avalanche energy (Note 3)
E
AR
0.13
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
R
th (ch-a)
96.1
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
90 V, T
ch
25°C (initial), L 203 mH, R
G
25 , I
AR
1 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
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