参数资料
型号: 2SK3374
厂商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV)
中文描述: 东芝场效应晶体管硅?频道马鞍山型(π- MOSV)
文件页数: 4/6页
文件大小: 227K
代理商: 2SK3374
2SK3374
2002-08-09
4
D
D
G
t
Ambient temperature Ta (°C)
RDS (ON) Ta
D
D
Drain-source voltage V
DS
(V)
IDR VDS
D
D
Drain-source voltage V
DS
(V)
Capacitance VDS
C
Ambient temperature Ta (°C)
V
th
Ta
Ambient temperature Ta (°C)
P
D
Ta
D
D
G
G
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
5
1
3
2
4
0
80
0
40
80
120
160
40
Common source
VDS 10 V
ID 1 mA
pulse test
2.0
0.4
1.2
0.8
1.6
0
0
80
120
200
40
160
0
16
4
8
12
40
80
160
0
40
80
Common source
VGS 10 V
pulse test
ID 1A
0.25
0.5
0.01
10
0.03
0.3
3
0.2
0
1.2
0.6
0.4
0.8
1.0
10
3
1
VGS 0, 1 V
1
0.1
Common source
Ta 25°C
pulse test
500
100
300
200
400
0
0
4
6
8
10
2
Common source
ID 1 A
Ta 25°C
pulse test
180
VDS 360 V
VDS
VGS
20
4
12
8
16
0
90
10
30
100
1
0.1
100
10
Ciss
Coss
Crss
Common source
VGS 0 V
f 1 MHz
Ta 25°C
1
3
50
300
0.3 0.5
3
5
30 50
500
5
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