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参数资料
| 型号： | 2SK3374 |
| 厂商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) |
| 中文描述： | 东芝场效应晶体管硅?频道马鞍山型（π- MOSV） |
| 文件页数： | 2/6页 |
| 文件大小： | 227K |
| 代理商： | 2SK3374 |
2SK3374
2002-08-09
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
25 V, V
DS
0 V
10
A
Drain-source breakdown voltage
V
(BR) GSS
I
G
10 A, V
DS
0 V
30
V
Drain cut-OFF current
I
DSS
V
DS
450 V, V
GS
0 V
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
10 mA, V
GS
0 V
450
V
Gate threshold voltage
V
th
V
DS
10 V, I
D
1 mA
2.0
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
10 V, I
D
0.5 A
3.7
4.6
Forward transfer admittance
Y
fs
V
DS
10 V, I
D
0.5 A
0.3
0.7
S
Input capacitance
C
iss
180
Reverse transfer capacitance
C
rss
2
Output capacitance
C
oss
V
DS
25 V, V
GS
0 V, f 1 MHz
20
pF
Rise time
t
r
7
Turn-ON time
t
on
15
Fall time
t
f
30
Switching time
Turn-OFF time
t
off
70
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
5
Gate-source charge
Q
gs
3
Gate-drain (“miller”) charge
Q
gd
V
DD
360 V, V
GS
10 V, I
D
1 A
2
nC
Source-Drain Ratings and Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
1
A
Pulse drain reverse current
(Note 1)
I
DRP
2
A
Forward voltage (diode)
V
DSF
I
DR
1 A, V
GS
0 V
1.7
V
Reverse recovery time
t
rr
350
ns
Reverse recovery charge
Q
rr
I
DR
1 A, V
GS
0 V,
dI
DR
/dt 100 A/ s
1.3
nC
Marking
※
Type
K3374
※
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty
1%, t
w
10 s
0 V
10
V
V
GS
R
L
400
V
DD
200 V
I
D
0.5
A
V
OUT
1
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