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参数资料
| 型号： | 2SK3389 |
| 厂商： | Toshiba Corporation |
| 元件分类： | DC/DC变换器 |
| 英文描述： | Switching Regulator, DC-DC Converter Applications Motor Drive Applications |
| 中文描述： | 开关稳压器，DC - DC转换应用电机驱动应用 |
| 文件页数： | 2/6页 |
| 文件大小： | 320K |
| 代理商： | 2SK3389 |
2SK3389
2002-03-04
2
Electrical Characteristics
(Note 4) (Tc
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
I
DSS
V
GS
=
±
25 V, V
DS
=
0 V
V
DS
=
30 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
38 A
V
DS
=
10 V, I
D
=
38 A
±
10
100
μ
A
μ
A
Drain cut-off current
Drain-source breakdown voltage
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
30
V
Gate threshold voltage
2.0
4.0
V
Drain-source ON resistance
3.8
5.0
m
Forward transfer admittance
35
70
S
Input capacitance
3530
Reverse transfer capacitance
570
Output capacitance
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
1870
pF
Rise time
t
r
10
Turn-on time
t
on
25
Fall time
t
f
20
Switching time
Turn-off time
t
off
Duty
<
1%, t
w
=
10
μ
s
65
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
62
Gate-source charge
Q
gs
Q
gd
43
Gate-drain (“miller”) charge
V
DD
～
24 V, V
GS
=
10 V, I
D
=
75 A
19
nC
Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin.
(However, while switching times are measured, please don’t connect and ground it.)
Source-Drain Ratings and Characteristics
(Note 5) (Tc
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1, Note 5)
I
DR
1
75
A
Pulse drain reverse current
(Note 1, Note 5)
I
DRP
1
300
A
Continuous drain reverse current
(Note 1, Note 5)
I
DR
2
1
A
Pulse drain reverse current
(Note 1, Note 5)
I
DRP
2
4
A
Forward voltage (diode)
V
DS2F
t
rr
Q
rr
I
DR
1
=
75 A, V
GS
=
0 V
I
DR
=
75 A, V
GS
=
0 V,
dI
DR
/dt
=
50 A/
μ
s
1.5
V
Reverse recovery time
120
ns
Reverse recovery charge
180
nC
Note 5: drain, flowing current value between the S2 pin, open the S1 pin
drain, flowing current value between the S1 pin, open the S2 pin
Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin.
Marking
R
L
=
V
DD
～
15 V
0 V
V
GS
10 V
4
I
D
=
38 A
V
OUT
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Type
K3389
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相关代理商/技术参数 |
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|---|---|
| 2SK3389(TE24L,Q) | 功能描述:MOSFET N-ch 30V 75A 0.004 ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3389_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SK3390 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET UHF Power Amplifier |
| 2SK3391 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK3391_07 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
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