- 您现在的位置：买卖IC网 > PDF目录371554 > 2SK3397 (Toshiba Corporation) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) PDF资料下载
参数资料
| 型号： | 2SK3397 |
| 厂商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) |
| 中文描述： | 东芝场效应晶体管硅?频道马鞍山型（U型马鞍山） |
| 文件页数： | 2/3页 |
| 文件大小： | 96K |
| 代理商： | 2SK3397 |
2SK3397
2002-02-27
2
Electrical Characteristics
(Tc
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
16 V, V
DS
=
0 V
±
10
μ
A
Drain cut-OFF current
I
DSS
V
DS
=
30 V, V
GS
=
0 V
10
μ
A
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
30
Drain-source breakdown voltage
V
(BR) DSX
I
D
=
10 mA, V
GS
=
20 V
15
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
1.5
3..0
V
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
35 A
4.0
6.0
m
Forward transfer admittance
Y
fs
V
DS
=
10 V, I
D
=
35 A
55
110
S
Input capacitance
C
iss
5000
Reverse transfer capacitance
C
rss
550
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
1000
pF
Rise time
t
r
8.0
Turn-ON time
t
on
25
Fall time
t
f
48
Switching time
Turn-OFF time
t
off
V
GS
180
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
110
Gate-source charge
Q
gs
87
Gate-drain (“miller”) charge
Q
gd
V
DD
～
24 V, V
GS
=
10 V, I
D
=
70 A
23
nC
Source-Drain Ratings and Characteristics
(Tc
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
70
A
Pulse drain reverse current
(Note 1)
I
DRP
210
A
Forward voltage (diode)
V
DSF
I
DR
=
70 A, V
GS
=
0 V
1.7
V
Reverse recovery time
t
rr
40
ns
Reverse recovery charge
Q
rr
I
DR
=
70 A, V
GS
=
0 V,
dI
DR
/dt
=
30 A/
μ
s
40
nC
Marking
Duty
<
1%, t
w
=
10
μ
s
0 V
10
V
R
L
=
0.43
V
DD
～
15 V
I
D
=
35
A
V
OUT
4
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Type
K3397
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3398 | Switching Regulator and DC-DC Converter Applications and Motor Drive Applications |
| 2SK3399 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 2SK3403 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 2SK3407 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV) |
| 2SK3417 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3397_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Relay Drive and DC-DC Converter Applications Motor Drive Applications |
| 2SK3397_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Relay Drive and DC-DC Converter Applications |
| 2SK3398 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SK3398_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SK3399 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:SWITCHING REGULATOR APPLICATIONS |
发布紧急采购，3分钟左右您将得到回复。