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参数资料
| 型号： | 2SK3417(2-10S1B) |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10S1B, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 233K |
| 代理商： | 2SK3417(2-10S1B) |
2SK3417
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3417
Switching Regulator Applications
Reverse-recovery time: trr = 60 ns (typ.)
Built-in high-speed flywheel diode
Low drain-source ON resistance: RDS (ON) = 1.6 (typ.)
High forward transfer admittance:
Yfs = 4.0 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 500 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Drain-gate voltage (RGS = 20 k)
VDGR
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
5
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc
= 25°C)
PD
50
W
Single pulse avalanche energy
(Note 2)
EAR
180
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.5
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
83.3
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 ,
IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
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相关代理商/技术参数 |
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|---|---|
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| 2SK3419-E | 制造商:Renesas Electronics Corporation 功能描述: |
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