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参数资料
| 型号： | 2SK3417(2-10S1B) |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10S1B, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 233K |
| 代理商： | 2SK3417(2-10S1B) |
2SK3417
2004-07-06
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
A
Drain-source breakdown voltage
V (BR) GSS
IG = ±100 A, VDS = 0 V
±30
V
Drain cut-OFF current
IDSS
VDS = 500 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
1.6
1.8
Forward transfer admittance
Yfs
VDS = 10 V, ID = 2.5 A
2.5
4.0
S
Input capacitance
Ciss
780
Reverse transfer capacitance
Crss
60
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
200
pF
Rise time
tr
12
Turn-ON time
ton
25
Fall time
tf
15
Switching time
Turn-OFF time
toff
60
ns
Total gate charge
(gate-source plus gate-drain)
Qg
17
Gate-source charge
Qgs
11
Gate-drain (“miller”) charge
Qgd
VDD 400 V, VGS = 10 V, ID = 5 A
6
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
60
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/s
0.1
C
Marking
Duty <= 1%, tw = 10 s
0 V
10 V
VGS
RL = 90
VDD 225 V
ID = 2.5 A
VOUT
15
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3417
Part No. (or abbreviation code)
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相关代理商/技术参数 |
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| 2SK3419-E | 制造商:Renesas Electronics Corporation 功能描述: |
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