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参数资料
| 型号： | 2SK3417(2-10S1B) |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10S1B, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 233K |
| 代理商： | 2SK3417(2-10S1B) |
2SK3417
2004-07-06
4
RDS (ON) Tc
IDR VDS
Capacitance – VDS
Vth Tc
PD Tc
Dynamic input/output characteristics
Channel temperature Tc (°C)
Drain-source voltage VDS (V)
Channel temperature Tc (°C)
Case temperature Tc (°C)
Total gate charge Qg (nC)
Drain
re
ve
rs
ec
ur
re
nt
I DR
(
A
)
Dr
ai
n-
so
ur
ce
o
n
r
esi
st
an
ce
R
DS
(ON)
(
)
Gate
th
res
hol
dvol
ta
ge
V
th
(
V
)
Capa
citanc
e
C
(p
F)
D
rain-s
our
ce
v
olt
age
V
DS
(V)
Drain
po
w
er
diss
ip
a
tion
P
D
(W
)
Gat
e-
sour
ce
v
ol
tag
e
V
GS
(V
)
10
20
10
0
40
80
120
200
30
40
160
50
100
200
0
5
10
15
25
300
400
20
500
4
8
0
12
16
20
Common source
ID = 5 A
Tc
= 25°C
Pulse test
VDD = 100 V
VGS
400
200
VDS
0
2
4
6
8
10
0
40
80
120
160
Common source
VGS = 10 V
Pulse test
1.2
2.5
ID = 5 A
0
1
2
3
4
5
0
40
80
120
160
Common source
VDS = 10 V
ID = 1 mA
Pulse test
50
300
1000
5
0.1
0.3
3
10
100
10
500
2000
1
30
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
Ciss
Coss
Crss
50
5
0.5
Common source
Tc
= 25°C
Pulse test
3
5
1
0.1
0
0.4
1.6
10
0.8
1.2
10
VGS = 0, 1 V
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3417-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3418 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:2SK3418 |
| 2SK3418-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 85A 3-Pin(3+Tab) TO-220AB 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 85A 3-Pin(3+Tab) TO-220AB Cut Tape |
| 2SK3419 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3419-E | 制造商:Renesas Electronics Corporation 功能描述: |
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