- 您现在的位置：买卖IC网 > PDF目录33498 > 2SK3430-Z 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3430-Z |
| 元件分类： | JFETs |
| 英文描述： | 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-25Z, TO-220SMD, 3 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 217K |
| 代理商： | 2SK3430-Z |
1999,2000
MOS FIELD EFFECT TRANSISTOR
2SK3430
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D14599EJ3V0DS00 (3rd edition)
Date Published
July 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3430 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 7.3 m
MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 15 m
MAX. (VGS = 4 V, ID = 40 A)
Low Ciss: Ciss = 2800 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±80
A
Drain Current (pulse)
Note1
ID(pulse)
±200
A
Total Power Dissipation (TC = 25°C)
PT
84
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
37
A
Single Avalanche Energy
Note2
EAS
137
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 , VGS = 20
→ 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3430
TO-220AB
2SK3430-S
TO-262
2SK3430-ZJ
TO-263
2SK3430-Z
TO--220SMD
Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263 ,TO-220SMD)
The mark ! shows major revised points.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3431-Z | 83 A, 40 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3431-S | 83 A, 40 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 2SK3432-ZJ | 83 A, 40 V, 0.0069 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3432-S-AZ | 83 A, 40 V, 0.0069 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3432-AZ | 83 A, 40 V, 0.0069 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3430-Z(AZ) | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-220 SMD |
| 2SK3430-Z-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-220 SMD Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-220 SMD |
| 2SK3430-Z-E1-AZ | 功能描述:MOSFET N-CH 40V 80A TO220AB 制造商:renesas electronics america 系列:- 包装:管件 零件状态:有效 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:标准 漏源极电压（Vdss）:40V 电流 - 连续漏极（Id）（25°C 时）:80A（Tc） 不同?Id，Vgs 时的?Rds On（最大值）:7.3 毫欧 @ 40A，10V 不同 Id 时的 Vgs（th）（最大值）:- 不同 Vgs 时的栅极电荷（Qg）:50nC @ 10V 不同 Vds 时的输入电容（Ciss）:2800pF @ 10V 功率 - 最大值:1.5W 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 供应商器件封装:TO-220AB 标准包装:1,000 |
| 2SK3430-ZJ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 80A I(D) | TO-263AB |
| 2SK3431 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
发布紧急采购，3分钟左右您将得到回复。