参数资料
型号: 2SK3430-Z
元件分类: JFETs
英文描述: 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: MP-25Z, TO-220SMD, 3 PIN
文件页数: 8/10页
文件大小: 217K
代理商: 2SK3430-Z
Data Sheet D14599EJ3V0DS
5
2SK3430
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
50
4
8
12
0
50
100
150
ID = 40 A
16
20
24
VGS = 4.0 V
Pulsed
VGS = 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
100
1000
10000
100000
0.1
1
10
100
VGS = 0 V
f = 1 MHz
Coss
Crss
Ciss
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
ID - Drain Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1.0
10
100
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
20
30
10
40
50
60
70
80
10
20
30
40
50
60
70
80
2
0
4
6
8
10
12
14
16
VDS
VGS
VDD = 32 V
20 V
8 V
ID = 80 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
ISD
-
Diode
Forward
Current
-
A
0
1.5
VSD - Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
VGS = 0 V
VGS = 10 V
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
100
10
1
0.1
1000
10000
10
100
tf
tr
td(on)
td(off)
相关PDF资料
PDF描述
2SK3431-Z 83 A, 40 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3431-S 83 A, 40 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
2SK3432-ZJ 83 A, 40 V, 0.0069 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3432-S-AZ 83 A, 40 V, 0.0069 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
2SK3432-AZ 83 A, 40 V, 0.0069 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
2SK3430-Z(AZ) 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-220 SMD
2SK3430-Z-AZ 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-220 SMD Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-220 SMD
2SK3430-Z-E1-AZ 功能描述:MOSFET N-CH 40V 80A TO220AB 制造商:renesas electronics america 系列:- 包装:管件 零件状态:有效 FET 类型:MOSFET N 通道,金属氧化物 FET 功能:标准 漏源极电压(Vdss):40V 电流 - 连续漏极(Id)(25°C 时):80A(Tc) 不同?Id,Vgs 时的?Rds On(最大值):7.3 毫欧 @ 40A,10V 不同 Id 时的 Vgs(th)(最大值):- 不同 Vgs 时的栅极电荷(Qg):50nC @ 10V 不同 Vds 时的输入电容(Ciss):2800pF @ 10V 功率 - 最大值:1.5W 工作温度:150°C(TJ) 安装类型:通孔 封装/外壳:TO-220-3 供应商器件封装:TO-220AB 标准包装:1,000
2SK3430-ZJ 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 80A I(D) | TO-263AB
2SK3431 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor