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参数资料
| 型号： | 2SK3472 |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 450 V, 4.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-7B1B, SC-64, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 198K |
| 代理商： | 2SK3472 |
2SK3472
2010-02-05
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS V)
2SK3472
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 4.0 m (typ.)
High forward transfer admittance: |Yfs| = 0.8 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 450 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
450
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
450
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
1
A
Drain current
Pulse (Note 1)
IDP
2
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single-pulse avalanche energy (Note 2)
EAS
122
mJ
Avalanche current
IAR
1
A
Repetitive avalanche energy
(Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 203 mH, RG = 25 Ω,
IAR = 1 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1.1
± 0.2
0.
1
±
0.
1
1.05 MAX.
2.3
± 0.15
5.2
± 0.2
0.8 MAX.
0.6 MAX.
9.
5
±
0.
3
1.
2M
A
X
.
1.
5
±
0.
2
6.5
± 0.2
1
2
3
0.6 MAX.
5.
5
±
0.
2
0.6
± 0.15
2.
3
±
0.
2
2.3
± 0.15
1. GATE
2. DRAIN
（
HEAT SIN K）
3. SOURSE
3
2
1
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3472_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N-Channel MOS Type Switching Regulator Applications |
| 2SK3473 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
| 2SK3473(F) | 制造商:Toshiba 功能描述:Nch 900V 9A 1.6@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN |
| 2SK3473_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3473_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
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