参数资料
型号: 2SK3511-AZ
元件分类: JFETs
英文描述: 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: MP-25, 3 PIN
文件页数: 4/10页
文件大小: 216K
代理商: 2SK3511-AZ
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2001
MOS FIELD EFFECT TRANSISTOR
2SK3511
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D15617EJ1V0DS00 (1st edition)
Date Published
May 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3511 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on) = 12.5 m
MAX. (VGS = 10 V, ID = 42 A)
Low Ciss: Ciss = 5900 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
75
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±83
A
Drain Current (pulse)
Note1
ID(pulse)
±260
A
Total Power Dissipation (TC = 25°C)
PT
100
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
52
A
Single Avalanche Energy
Note2
EAS
250
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 35 V, RG = 25
, VGS = 20
→ 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.25
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3511
TO-220AB
2SK3511-S
TO-262
2SK3511-ZJ
TO-263
2SK3511-Z
TO-220SMD
Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
相关PDF资料
PDF描述
2SK3511-Z 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3518-01MR 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3565 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3570-ZK 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
2SK3570-Z 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
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