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参数资料
| 型号： | 2SK3511-AZ |
| 元件分类： | JFETs |
| 英文描述： | 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-25, 3 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 216K |
| 代理商： | 2SK3511-AZ |
Data Sheet D15617EJ1V0DS
2
2SK3511
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 75 V, VGS = 0 V10
A
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.0
3.0
4.0
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 42 A21
45
S
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 42 A
9.5
12.5
m
Input Capacitance
Ciss
VDS = 10 V
5900
pF
Output Capacitance
Coss
VGS = 0 V
810
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
400
pF
Turn-on Delay Time
td(on)
VDD = 38 V, ID = 42 A30
ns
Rise Time
tr
VGS = 10 V21
ns
Turn-off Delay Time
td(off)
RG = 0
72
ns
Fall Time
tf
12
ns
Total Gate Charge
QG
VDD = 60 V
100
nC
Gate to Source Charge
QGS
VGS = 10 V24
nC
Gate to Drain Charge
QGD
ID = 83 A35
nC
Body Diode Forward Voltage
VF(S-D)
IF = 83 A, VGS = 0 V1.1
V
Reverse Recovery Time
trr
IF = 83 A, VGS = 0 V70
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
200
nC
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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