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参数资料
| 型号： | 2SK3511-Z |
| 元件分类： | JFETs |
| 英文描述： | 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-25Z, TO-220SMD, 3 PIN |
| 文件页数： | 10/10页 |
| 文件大小： | 216K |
| 代理商： | 2SK3511-Z |
Data Sheet D15617EJ1V0DS
7
2SK3511
PACKAGE DRAWINGS (Unit: mm)
1) TO-220 (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
4
3) TO-263 (MP-25ZJ)
4) TO-220SMD (MP-25Z)
Note
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R
TYP.
0.8R
TYP.
2.8±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
10 TYP.
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
0.5R
TYP.
0.8R
TYP.
0.75±0.3
2.8±0.2
Note This Package is only produced in Japan.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD.
When this device actually
used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3518-01MR | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3565 | 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3570-ZK | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 2SK3570-Z | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3570-S | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3512-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SK3513-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SK3514-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3515-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3516-01LZSC | 制造商:Fuji Electric 功能描述: |
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