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参数资料
| 型号： | 2SK3538 |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-9F1C, 4 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 196K |
| 代理商： | 2SK3538 |
2SK3538
2007-11-22
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 4 A
—
0.75
0.85
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 4 A
3.5
7.0
—
S
Input capacitance
Ciss
—
1300
—
Reverse transfer capacitance
Crss
—
130
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
400
—
pF
Rise time
tr
—
26
—
Turnon time
ton
—
45
—
Fall time
tf
—
40
—
Switching time
Turnoff time
toff
Duty ≤ 1%, tw = 10 μs
—
140
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
30
—
Gatesource charge
Qgs
—
17
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 8 A
—
13
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
8
A
Pulse drain reverse current
(Note 1)
IDRP
—
32
A
Forward voltage (diode)
VDSF
IDR = 8 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
1200
—
ns
Reverse recovery charge
Qrr
IDR = 8 A, VGS = 0 V, dIDR / dt = 100 A / μs
—
10
—
μC
Marking
K3538
Lot No.
A line indicates
Lead (Pb)-Free Finish.
Part No. (or abbreviation code)
R
L
=50
Ω
VDD ≈ 200 V
0 V
VGS
10 V
50
Ω
ID = 4 A
Vout
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相关代理商/技术参数 |
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| 2SK353900L | 功能描述:MOSFET N-CH 50V .1A S-MINI-3P RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3539G0L | 功能描述:MOSFET N-CH 50V .1A S-MINI-3P RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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| 2SK3541T2L | 功能描述:MOSFET N-CH 30V .1A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3541T2L-CUT TAPE | 制造商:ROHM 功能描述:Single N-Channel 150 mW 30 V 13 Ohm Surface Mount 2.5 V Drive MosFet - VMT-3 |
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