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参数资料
| 型号： | 2SK3562 |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 207K |
| 代理商： | 2SK3562 |
2SK3562
2010-01-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 600 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 3 A
0.9
1.25
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 3 A
1.2
5.0
S
Input capacitance
Ciss
1050
Reverse transfer capacitance
Crss
10
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
110
pF
Rise time
tr
20
Turn-on time
ton
40
Fall time
tf
35
Switching time
Turn-off time
toff
130
ns
Total gate charge
Qg
28
Gate-source charge
Qgs
16
Gate-drain charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 6 A
12
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
6
A
Pulse drain reverse current
(Note 1)
IDRP
24
A
Forward voltage (diode)
VDSF
IDR = 6 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
1000
ns
Reverse recovery charge
Qrr
IDR = 6 A, VGS = 0 V,
dIDR/dt = 100 A/μs
7.0
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
K3562
Part No. (or abbreviation code)
RL =
66
Ω
0 V
10 V
VGS
VDD ≈ 200 V
ID = 3 A
VOUT
50
Ω
Duty
≤ 1%, tw = 10 μs
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| 2SK3570-S | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3570-Z | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3562(Q) | 功能描述:MOSFET N-Ch 600V 6A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3562(S4TETV,X,M | 制造商:Toshiba 功能描述:TRANSISTOR |
| 2SK3562(STA4,Q) | 制造商:Toshiba 功能描述:Nch 600V 6A 1.25@10V TO220SIS Bulk |
| 2SK3562(STA4,Q,M) | 制造商:Toshiba 功能描述:TRANSISTOR |
| 2SK3562(STA4,X,S) | 制造商:Toshiba 功能描述:TRANSISTOR |
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