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参数资料
| 型号： | 2SK3562 |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 207K |
| 代理商： | 2SK3562 |
2SK3562
2010-01-29
5
500
400
300
200
100
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
EAS – Tch
A
V
A
LANCHE
EN
ERGY
E
AS
(
m
J)
rth – tw
PULSE WIDTH tw (s)
NO
RMALI
Z
ED
TRANSIENT
THE
R
MAL
IMPEDANCE
r
th
(t
)/R
th
(c
h-c)
Duty=0.5
SINGLE PULSE
15 V
TEST CIRCUIT
WAVEFORM
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = 90 V, L = 16.8mH
=
VDD
BVDSS
2
I
L
2
1
ΕAS
DRAIN-SOURCE VOLTAGE VDS (V)
SAFE OPERATING AREA
DRAIN
CU
RREN
T
I
D
(A)
0.01
10μ
0.1
1
10
100μ
1ｍ
10ｍ
100ｍ
1
T
PDM
t
Duty
= t/T
Rth (ch-c) = 3.125°C/W
0.2
0.1
0.05
0.02
0.01
0.001
1000
* SINGLE NONREPETITIVE
PULSE
Tc=25℃
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
ID max (PULSED) *
ID max (CONTINUOUS)
DC OPERATION
Tc
= 25°C
100
μs *
1 ms *
0.1
1
10
100
10
100
VDSS max
0.01
10
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3568 | 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3570-ZK | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 2SK3570-S | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3570-Z | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3572-ZK | 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3562(Q) | 功能描述:MOSFET N-Ch 600V 6A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3562(S4TETV,X,M | 制造商:Toshiba 功能描述:TRANSISTOR |
| 2SK3562(STA4,Q) | 制造商:Toshiba 功能描述:Nch 600V 6A 1.25@10V TO220SIS Bulk |
| 2SK3562(STA4,Q,M) | 制造商:Toshiba 功能描述:TRANSISTOR |
| 2SK3562(STA4,X,S) | 制造商:Toshiba 功能描述:TRANSISTOR |
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