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参数资料
| 型号： | 2SK3562 |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 207K |
| 代理商： | 2SK3562 |
2SK3562
2010-01-29
3
DRAIN-SOURCE VOLTAGE VDS
(V)
ID – VDS
DRAIN
CU
RREN
T
I
D
(A)
8
6
4
2
0
10
0
10
20
50
VGS = 4 V
4.6
4.8
10,15
5
5.2
30
40
4.4
4.2
COMMON SOURCE
Tc
= 25°C
PULSE TEST
DRAIN CURRENT ID (A)
RDS (ON) – ID
DRAIN-S
OUR
C
E
ON-
RESIST
A
NCE
R
DS
(
O
N
)
(
m
Ω
)
DRAIN CURRENT ID (A)
Yfs – ID
FO
R
W
ARD
TRA
N
SFER
ADMITT
ANCE
Y
fs
(S)
DRAIN-SOURCE VOLTAGE VDS
(V)
ID – VDS
DRAIN
CU
RREN
T
I
D
(A)
5
4
2
1
0
2
4
6
8
VGS = 4 V
4.2
4.4
4.6
5
6
4.8
15
10
3
10
COMMON
SOURCE
Tc
= 25°C
PULSE TEST
GATE-SOURCE VOLTAGE VGS
(V)
ID – VGS
DRAIN
CU
RREN
T
I
D
(A)
DRAIN-S
O
U
RCE
VO
LT
AG
E
V
DS
(V)
GATE-SOURCE VOLTAGE VGS
(V)
VDS – VGS
0
4
6
8
10
0
ID = 6 A
4
8
12
16
20
1.5
3
2
COMMON SOURCE
Tc
= 25℃
PULSE TEST
COMMON SOURCE
Tc
= 25°C
PULSE TEST
0.1
1
10
1
10
VGS = 10 V15V
COMMON SOURCE
VDS = 20 V
PULSE TEST
0
2
4
6
8
10
2
10
Tc
= 55°C
25
100
4
6
8
COMMON SOURCE
VDS = 20 V
PULSE TEST
10
0.1
10
100
0.1
1
25
100
Tc
= 55°C
1
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3568 | 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3570-ZK | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 2SK3570-S | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3570-Z | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3572-ZK | 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3562(Q) | 功能描述:MOSFET N-Ch 600V 6A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3562(S4TETV,X,M | 制造商:Toshiba 功能描述:TRANSISTOR |
| 2SK3562(STA4,Q) | 制造商:Toshiba 功能描述:Nch 600V 6A 1.25@10V TO220SIS Bulk |
| 2SK3562(STA4,Q,M) | 制造商:Toshiba 功能描述:TRANSISTOR |
| 2SK3562(STA4,X,S) | 制造商:Toshiba 功能描述:TRANSISTOR |
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