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参数资料
| 型号： | 2SK3565 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 225K |
| 代理商： | 2SK3565 |
2SK3565
2009-09-29
4
100
40
0
40
80
120
160
20
60
80
200
DRAIN
POWE
R
DISSIP
A
T
IO
N
P
D
(W
)
G
A
TE
THRESHO
LD
V
O
LT
AG
E
V
th
(V)
CASE TEMPERATURE Tc (°C)
RDS (ON) – Tc
DRAIN-S
OUR
C
E
ON
RESIS
TAN
CE
R
DS
(
O
N
)
(
Ω
)
DRAIN-SOURCE VOLTAGE VDS (V)
IDR – VDS
DRAIN
REVERS
E
CURREN
T
I DR
(A)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE – VDS
CAP
A
CIT
A
N
CE
C
(pF)
CASE TEMPERATURE Tc (°C)
Vth – Tc
CASE TEMPERATURE Tc (°C)
PD – Tc
G
A
TE
-SO
U
RCE
VO
LT
AG
E
V
GS
(V)
TOTAL GATE CHARGE Qg (nC)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
DRAIN-S
O
U
RCE
VO
LT
AG
E
V
DS
(V)
0
100
200
300
400
500
0
4
8
12
16
20
0
10
20
VDD = 100 V
VDS
VGS
400
200
30
40
COMMON SOURCE
ID = 5 A
Tc
= 25°C
PULSE TEST
COMMON SOURCE
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
10
0.1
100
1000
10000
1
3
5
10
30 50
100
Ciss
Coss
Crss
COMMON SOURCE
PULSE TEST
160
40
0
40
80
120
80
10
8
6
4
2
0
ID = 5A
1.5
3
VGS = 10 V
COMMON SOURCE
Tc
= 25°C
PULSE TEST
0
0.1
0.4
0.3
0.5
1
3
5
10
0.8
1.2
1.6
VGS = 0, 1 V
10
3
1
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
0
1
2
3
5
80
40
0
40
80
120
160
4
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3570-ZK | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 2SK3570-Z | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3570-S | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 2SK3570-S | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 2SK3571-ZK-AZ | 48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3565(Q) | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3565(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 900V, 5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3565(STA4,Q,M | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3565(STA4,Q,M) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3565Q | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 900V 5A 3-Pin(3+Tab) TO-220NIS |
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