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参数资料
| 型号： | 2SK3565 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 225K |
| 代理商： | 2SK3565 |
2SK3565
2009-09-29
5
1000
800
600
400
200
0
25
50
75
100
125
150
ドレインソース間電圧
VDS (V)
SAFE OPERATING AREA
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
EAS – Tch
A
V
A
LANCHE
EN
ERGY
E
AS
(
m
J)
rth – tw
PULSE WIDTH tw (s)
NO
RMALI
Z
ED
TRANSIENT
THE
R
MAL
IMPEDANCE
r
th
(t
)/R
th
(c
h-c)
0.01
1
0.1
1
10
100
10
1000
100
10000
※
SINGLE NONREPETITIVE PULSE
Tc=25℃
CURVES
MUST
BE
DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
ID max (PULSED) *
ID max (CONTINUOUS) *
DC OPERATION
Tc
= 25°C
100
μs *
1 ms *
VDSS max
15 V
TEST CIRCUIT
WAVE FORM
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = 90 V, L = 43.6mH
=
VDD
BVDSS
2
I
L
2
1
ΕAS
DRAIN
CU
RREN
T
I
D
(A)
T
PDM
t
Duty
= t/T
Rth (ch-c) = 1.25°C/W
Duty=0.5
0.2
0.1
SINGLE PULSE
0.05
0.02
0.01
10μ
0.1
1
10
100μ
1ｍ
10ｍ
100ｍ
1
10
T
PDM
t
Duty
= t/T
Rth (ch-c) = 2.78°C/W
0.001
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3570-ZK | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 2SK3570-Z | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3570-S | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 2SK3570-S | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 2SK3571-ZK-AZ | 48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3565(Q) | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3565(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 900V, 5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3565(STA4,Q,M | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3565(STA4,Q,M) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3565Q | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 900V 5A 3-Pin(3+Tab) TO-220NIS |
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