参数资料
型号: 2SK3639-ZK
元件分类: 小信号晶体管
英文描述: 64000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
封装: MP-3ZK, 3 PIN
文件页数: 3/9页
文件大小: 276K
代理商: 2SK3639-ZK
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MOS FIELD EFFECT TRANSISTOR
2SK3639
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15967EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2002
The mark
shows major revised points.
DESCRIPTION
The 2SK3639 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 5.5 m
MAX. (VGS = 10 V, ID = 32 A)
RDS(on)2 = 8.5 m
MAX. (VGS = 4.5 V, ID = 32 A)
Low Ciss: Ciss = 2400 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±64
A
Drain Current (pulse)
Note
ID(pulse)
±256
A
Total Power Dissipation (TC = 25°C)
PT1
40
W
Total Power Dissipation
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10
s, Duty Cycle ≤ 1%
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3639-ZK
TO-252 (MP-3ZK)
(TO-252)
相关PDF资料
PDF描述
2SK3640-ZK 19000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
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相关代理商/技术参数
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