参数资料
型号: 2SK3639-ZK
元件分类: 小信号晶体管
英文描述: 64000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
封装: MP-3ZK, 3 PIN
文件页数: 7/9页
文件大小: 276K
代理商: 2SK3639-ZK
Data Sheet D15967EJ3V0DS
5
2SK3639
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-m
0
2.5
5
7.5
10
12.5
- 50 - 25
0
25
50
75
100 125 150
ID = 32 A
Pulsed
10 V
VGS = 4.5 V
Tch - Channel Temperature - °C
C
is
s,
C
os
s,
C
rss
-Capacitance
-pF
10
100
1000
10000
0.01
0.1
1
10
100
V GS = 0 V
f = 1 M H z
C iss
C oss
C rss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
,t
r,t
d(
off)
,t
f-
Swi
tching
Time
-ns
1
10
100
1000
0.1
1
10
100
tr
td(off)
td(on)
tf
VDD = 10 V
VGS = 10 V
R G = 10
ID - Drain Current - A
V
DS
-
D
rain
to
So
urce
Voltage
-
V
0
4
8
12
16
20
0
1020
3040
50
0
2
4
6
8
10
VDS
VDD = 16 V
10 V
ID = 64 A
VGS
QG - Gate Charge - nC
V
GS
-
Gate
to
So
urce
Voltage
-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F-
Diode
Fo
rwa
rd
Curren
t-
A
0.01
0.1
1
10
100
1000
0
0.5
1
1.5
VGS = 10 V
0 V
Pulsed
VF(S-D) - Source to Drain Voltage - V
t
rr-
Rev
ers
eRec
ov
ery
Ti
me
-ns
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
s
VGS = 0 V
IF - Diode Forward Current - A
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