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参数资料
| 型号： | 2SK3692-01 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 17 A, 450 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 104K |
| 代理商： | 2SK3692-01 |
3
2SK3692-01
FUJI POWER MOSFET
0
5
10
15
20
25
30
35
40
45
50
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=17A,Tch=25
°C
VGS
[V
]
360V
225V
Vcc= 90V
10
-1
10
0
10
1
10
2
10
3
10
-3
10
-2
10
-1
10
0
10
1
C
[
n
F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
IF
[A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
s pulse test,Tch=25°C
10
-1
10
0
10
1
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t[
n
s
]
ID [A]
0
25
50
75
100
125
150
0
100
200
300
400
500
600
I
AS
=7A
I
AS
=11A
I
AS
=17A
E
AS
[m
J]
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E
AS
=f(starting Tch):Vcc=45V
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VG
S(
th)
[V
]
Tch [
°C]
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