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参数资料
| 型号： | 2SK3738 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | SMCP, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 20K |
| 代理商： | 2SK3738 |
2SK3738
No.7671-1/3
Application
Impedance conversion.
Infrared sensor.
Features
Small IGSS.
Small Ciss.
Ultrasmall package permitting applied sets to be
small and slim.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
40
V
Gate-to-Drain Voltage
VGDS
--40
V
Gate Current
IG
10
mA
Drain Current
ID
1mA
Allowable Power Dissipation
PD
100
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IG=--10A, VDS=0
--40
V
Gate-to-Source Leakage Current
IGSS
VGS=--20V, VDS=0
--500
pA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1A
--1.5
--2.3
V
Zero-Gate Voltage Drain Current
IDSS
VDS=10V, VGS=0
50
130
A
Forward Transfer Admittance
yfs
VDS=10V, VGS=0, f=1kHz
0.06
0.13
mS
Input Capacitance
Ciss
VDS=10V, VGS=0, f=1MHz
1.7
pF
Reverse Transfer Capacitance
Crss
VDS=10V, VGS=0, f=1MHz
0.7
pF
Marking : KB
N-Channel Junction Silicon FET
Ordering number : ENN7671
2SK3738
42004GB TS IM TA-100829
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Impedance Converter Applications
Package Dimensions
unit : mm
2124
[2SK3738]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Source
2 : Drain
3 : Gate
SANYO : SMCP
0.8
0.4
2
3
1.6
0.2
1.6
0.3
0.5
1
0.5
0.75
0.6
0~0.1
0.1
0.1max
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3738 | 1 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3740-ZK | 20 A, 250 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3747 | 2 A, 1500 V, 13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3760 | 3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3767 | 2 A, 600 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3738-TL-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK3740-ZK-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,250V/20A,TO263 |
| 2SK3742 | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3742(Q) | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3742(Q,M) | 功能描述:MOSFET N-Ch 900V 5A 45W PD Rdson 2.2 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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