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参数资料
| 型号： | 2SK3760 |
| 元件分类： | JFETs |
| 英文描述： | 3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-46, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 84K |
| 代理商： | 2SK3760 |
2SK3760
2004-02-26
1
10.5max
3.84}0.2
6.6
max.
2.7
15.6
max.
13.4
min.
1.5 max
0.81 max
2.54
3.9
max.
4.7max
1.3
0.45
2.7
1
2
3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSY)
2SK3760
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 1.7 (typ.)
High forward transfer admittance: |Yfs| = 2.5S (typ.)
Low leakage current: IDSS = 100 A (VDS = 600 V)
Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 k)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
3.5
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
14
A
Drain power dissipation (Tc
= 25°C)
PD
60
W
Single pulse avalanche energy
(Note 2)
EAS
6.3
mJ
Avalanche current
IAR
3.5
A
Repetitive avalanche energy (Note 3)
EAR
6
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.08
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
83.3
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 0.9 mH, IAR = 3.5 A, RG = 25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
unitF
1
3
2
Weight : 2.0g(typ.)
JEDEC
JEITA
TOSHIBA
TO-220AB
SC-46
\
1.
Gate
2.
Drain(HEAT SINK)
3.
Source
1.5 max
2.54
3.9
max
13.4
min
15.6
max
3.84}0.2
10.5 max
6.6
max
4.7 max
1.3
0.45
2.7
0.81
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3767 | 2 A, 600 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3827 | 40 A, 100 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3835 | 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3846 | 26 A, 40 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3857TV-A | 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3760(M) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 600V 3.5A 3PIN TO-220AB - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 3.5A TO-220AB |
| 2SK3760(Q,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 3.5A TO-220AB |
| 2SK3761 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 600V TO-220AB |
| 2SK3761(M) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 600V 6A 3PIN TO-220AB - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 6A TO-220AB |
| 2SK3761(Q,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 6A TO-220AB |
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