参数资料
型号: 2SK3749
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SSP, SC-70, 3 PIN
文件页数: 3/7页
文件大小: 230K
代理商: 2SK3749
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MOS FIELD EFFECT TRANSISTOR
2SK3749
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG
DATA SHEET
Document No. D17136EJ1V0DS00 (1st edition)
Date Published April 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The 2SK3749 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 2.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
Gate can be driven by 2.5 V
Because of its high input impedance, there’s no need to
consider drive current
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3749
SC-70 (SSP)
Marking: G27
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
50
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±7.0
V
Drain Current (DC)
ID(DC)
±100
mA
Drain Current (pulse)
Note
ID(pulse)
±200
mA
Total Power Dissipation
PT
150
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
2.1 ± 0.1
1.25 ± 0.1
0.65
0.3
0.65
2.0
±
0.2
0.9
±
0.1
0
to
0.1
0.15
+0.1 –0.05
2
1
3
+0.1
–0
0.3
+0.1 –0
0.3
Marking
1 : Source
2 : Gate
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
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