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参数资料
| 型号： | 2SK3754 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 30 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SC-67, 2-10R1B, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 133K |
| 代理商： | 2SK3754 |
2SK3754
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut-off current
IDSS
VDS = 30 V, VGS = 0 V
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = 20 V
15
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.3
2.5
V
VGS = 4.5 V, ID = 2.5 A
78
99
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
71
89
m
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 2.5 A
2.5
5.0
S
Input capacitance
Ciss
1250
Reverse transfer capacitance
Crss
155
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
170
pF
Rise time
tr
7
Turn-on time
ton
16
Fall time
tf
18
Switching time
Turn-off time
toff
69
ns
Total gate charge
Qg
25
Gate-source charge
Qgs
20
Gate-drain charge
Qgd
VDD 24 V, VGS = 10 V, ID = 5 A
5
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
15
A
Reverse recovery time
trr
37
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V,
dIDR/dt = 50 A/μs
20
nC
Marking
Duty
≤ 1%, tw = 10 μs
0 V
10 V
VGS
RL = 6 Ω
VDD 15 V
ID = 2.5 A
VOUT
4.7
Ω
Lot No.
Note 4
K3754
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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PDF描述 |
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| 2SK3774-01SJ | 32 A, 300 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3754(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3755-AZ | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 45A 3-Pin(3+Tab) TO-220 |
| 2SK3756(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFER N-ch 7.5V 1A 470MHz PW-Mini |
| 2SK3757(Q) | 功能描述:MOSFET PW MOSFET N-Ch 450V 2A 2.45 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3758 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220AB |
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