- 您现在的位置：买卖IC网 > PDF目录33503 > 2SK3842 75 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3842 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-9F1B, SC-97, 4 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 222K |
| 代理商： | 2SK3842 |
2SK3842
2009-09-29
2
Electrical Characteristics (Note 4) (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut-OFF current
IDSS
VDS = 60 V, VGS = 0 V
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = 20 V
35
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 38 A
4.6
5.8
m
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 38 A
46
93
S
Input capacitance
Ciss
12400
Reverse transfer capacitance
Crss
700
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1100
pF
Rise time
tr
18
Turn-ON time
ton
45
Fall time
tf
35
Switching time
Turn-OFF time
toff
200
ns
Total gate charge
(gate-source plus gate-drain)
Qg
196
Gate-source charge
Qgs
148
Gate-drain (“miller”) charge
Qgd
VDD 48 V, VGS = 10 V, ID = 75 A
48
nC
Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement.
Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1, Note 5)
IDR1
75
A
Pulse drain reverse current
(Note 1,Note 5)
IDRP1
300
A
Continuous drain reverse current (Note 1, Note 5)
IDR2
1
A
Pulse drain reverse current
(Note 1,Note 5)
IDRP2
4
A
Forward voltage (diode)
VDS2F
IDR1 = 75 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
70
ns
Reverse recovery charge
Qrr
IDR = 75 A, VGS = 0 V,
dIDR/dt = 50 A/μs
77
nC
Note 5: Current flowing between the drain and the S1 pin, when open the S2 pin is left open.
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
Marking
K3842
Lot No.
Note 4
Part No. (or abbreviation code)
Duty <= 1%, tw = 10 μs
0 V
10 V
VGS
RL = 0.79 Ω
VDD 30 V
ID = 38 A
VOUT
4.7
Ω
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3843 | 75 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3844 | 45 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3844 | 45 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3856 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK3856-6 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3842(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 60V 75A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3844(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3845(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3846(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 40V 26A TO220NIS |
| 2SK3847(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
发布紧急采购，3分钟左右您将得到回复。